Product Summary

The W9864G6XH-6 is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 μm process technology, the W9864G6XH-6 delivers a data bandwidth of up to 286M bytes per second (-7).

Parametrics

W9864G6XH-6 absolute maxing ratings: (1)Input, Column Output Voltage VIN, VOUT: -0.3-VDD +0.3 V; (2)Power Supply Voltage VDD, VDDQ: -0.3-4.6 V; (3)Operating Temperature TOPR: 0-70 ℃; (4)Storage Temperature TSTG: -55-150 ℃; (5)Soldering Temperature (10s) TSOLDER: 260 ℃; (6)Power Dissipation PD: 1 W; (7)Short Circuit Output Current IOUT: 50 mA.

Features

W9864G6XH-6 features: (1)2.7V - 3.6V power supply; (2)1048576 words×4 banks×16 bits organization; (3)Self refresh current: Standard and low power; (4)CAS latency: 2 and 3; (5)Burst Length: 1, 2, 4, 8, and full page; (6)Sequential and Interleave burst; (7)Burst read, single write operation; (8)Byte data controlled by DQM; (9)Power-down Mode; (10)Auto-precharge and controlled precharge; (11)4K refresh cycles/ 64 mS; (12)Interface: LVTTL; (13)Packaged in BGA 60 balls pitch = 0.65 mm, using PB free materials.

Diagrams

W9864G6XH-6 block diagram

W986408AH
W986408AH

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Data Sheet

Negotiable 
W986408BH
W986408BH

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Negotiable 
W986408CH
W986408CH

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Data Sheet

Negotiable 
W986416AH
W986416AH

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Negotiable 
W986416BH
W986416BH

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Negotiable 
W986416CH
W986416CH

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Data Sheet

Negotiable