(China (Mainland))
Product Summary
The 2SC2630 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applicaitons. The applications of the device are 40 to 60 watts otuput power amplifiers in VHF band mobile radio applicaitons.
Parametrics
2SC2630 absolute maximum ratings: (1)VCBO, collector to base voltage: 35V; (2)VEBO, emitter to base voltage: 4V; (3)VCEO, collector to emitter voltage: 17V; (4)IC, collector current: 14A; (5)PC, collector dissipation: 5.5W at Ta=25℃; 100W at Tc=25℃; (6)Tj, junction temeprature: 175℃; (7)Tstg, storage temperature: -55 to 175℃.
Features
2SC2630 features: (1)high power gain; (2)emitter ballasted construction and gold metallization for high reliability and good performances; (3)low thermal resistance ceramic package with flange; (4)ability of withstanding more than 20:1 load VSWR when oprated at VCC=15.2V, Po=50W, f=175MHz, Tc=25℃.
Diagrams
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 2SC2000 |
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2SC2001 |
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2SC2002 |
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2SC2003 |
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2SC2020 |
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2SC2021 |
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Negotiable |
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